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Help CenterHigh Refractoriness Ceramic PBN Pyrolytic Boron Nitride Plate,Rod And Crucible
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Specifications
Ceramic PBN Pyrolytic Boron Nitride Crucible1.Purity up to 99.99%,dense surface,air tightness
2.High temperature strength
The Professional Manufacturer For PBN Since Year 1980,The No.1 Exporter In China:
Pyrolytic Boron Nitride PBN Ceramic Plate,Crucible,Rod,Parts,The High Technology production & High Quality Assurance! Accept Customized Designs & Dimensions! Could Work In Max.2200 Celsius Degree.
Product Overview:
Pyrolytic boron nitride (PBN) is a special ceramic material, obtained from special equipment by using chemical vapor deposition process. The pyrolytic boron nitride deposition process, like a "snow": hexagonal boron nitride snow sheet parallel to falls, to a piece of graphite base material, and reaches a certain thickness, the final cooling demolding made.
Main features:
1.Color ivory white to orange-brown, non-toxic, non-porous, easy to process.
2.Purity up to 99.99%, dense surface, air tightness.
3.High temperature strength with increasing temperature, 2200 °C reaches the maximum value.
4.Acid, alkali, salt and organic reagents, high temperature, and the vast majority of the molten metal, semiconductor material is not moist, not reaction.
5 Good thermal shock resistance, good thermal conductivity, low thermal expansion coefficient.
6 High resistance, high dielectric strength, a small dielectric constant, and low magnetic loss tangent, and having a good permeability of microwave and infrared properties.
7. Performance of the mechanical, thermal, electrical, and so there is a clear anisotropy.
The main parameters:
Performance |
Unit |
Index |
|
Lattice constant |
μ m |
a:2.504×10-10 c:6.692×10-10 |
|
Apparent density |
g/cm3 |
2.0-2.19 |
|
Microhardness (Knoop) (ab plane) |
N/mm2 |
691.88 |
|
Volume resistivity |
Ω·cm |
3.11×1011 |
|
Tensile strength (|| “C”) |
N/mm2 |
153.86 |
|
Bending strength |
(|| “C”) |
N/mm2 |
243.63 |
(⊥“C”) |
N/mm2 |
197.76 |
|
Modulus of elasticity |
|
N/mm2 |
235690 |
Thermal conductivity |
|
W/m·k |
“a”direction “c”direction |
(200°C) |
W/m·k |
60 2.60 |
|
(900°C) |
W/m·k |
43.70 2.80 |
|
Dielectric strength (room temperature) |
KV/mm |
56 |
|
Applications:
Heater, to prevent the generation of impurities in the semiconductor material manufacturing equipment, in order to improve the purity.
Overview:
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