ASML MC1AB37 4022.437.1856 Motor Controller

I. Overview

• Sending motion control commands (e.g., speed/displacement commands, signal range ±10V, 24-bit resolution) to the servo drive via 8 differential analog outputs (AO);

• Enabling start/stop control of subsystems (e.g., wafer stage emergency stop, lens focusing enable, response time ≤1μs) through 4 high-speed digital outputs (DO);

• Collecting status feedback from the servo drive (e.g., actual current/position deviation, sampling rate 1MHz) via 8 differential analog inputs (AI);

• Incorporating a digital signal processor (DSP) that supports a composite control algorithm based on PID + feedforward to achieve dynamic error compensation (e.g., inertia compensation for wafer stage motion);

• Featuring signal filtering (adjustable low-pass filter cutoff frequency: 10kHz~100kHz) and fault self-diagnosis (output short circuit/overvoltage, feedback signal loss);

• Supporting control parameter configuration and status monitoring via ASML Equipment Control Software (ECS).

The MC1AB37 sends displacement commands to the servo drive via 8 AO outputs (24-bit resolution, minimum step size of 0.477μV corresponding to ±10V signal, translating to wafer stage displacement precision of ±0.1nm). Simultaneously, it collects the actual position deviation feedback from the laser interferometer via AI (sampling rate 1MHz), and the DSP calculates the compensation value in real time, controlling the wafer stage positioning error within ±0.5nm. This ensures precise alignment (overlay accuracy ≤1.5nm) between the 193nm lithographic pattern and existing patterns on the wafer, increasing the yield of 28nm process chips from 95% to 98%. In lens focusing control, the module outputs focusing commands via 2 AO channels to control the Z-axis displacement of the lens module (precision ±0.3nm), compensating for micro-irregularities on the wafer surface (maximum ±2μm) and preventing blurring of lithographic patterns caused by focal deviations (reducing the scrap rate of individual wafers due to focal issues from 2% to 0.3%). During 24/7 mass production in a semiconductor wafer fab, the MC1AB37 operated continuously for 365 days without faults, with a Mean Time Between Failures (MTBF) ≥50,000 hours. It meets the "year-round non-stop" mass production requirements of semiconductor fabs and reduces capacity losses caused by equipment downtime (daily capacity loss exceeding RMB 5 million).

• I/O Channels and Signal Processing: 8 differential AI channels (±10V, 24-bit resolution, 1MHz sampling rate), 8 differential AO channels (±10V, 24-bit resolution, 1kHz output update frequency), and 4 high-speed DO channels (TTL level, response time ≤1μs). All analog channels feature optoelectronic isolation (isolation voltage ≥3kVrms) and electromagnetic shielding (double-layer copper foil shield) to prevent interference from strong electromagnetic sources inside the lithography machine (e.g., laser generator, RF power supply) on control signals. Digital channels are equipped with overvoltage protection (±15V ESD protection).

• Core Control Unit: Built-in 32-bit floating-point DSP (TI TMS320C6748, operating rate 600 MIPS) that supports parallel processing of control algorithms for 8 servo axes (e.g., X/Y/Z axes of the wafer stage + X/Y axes of the reticle stage). It is equipped with 128MB DDR3 memory (for caching real-time control data) and 32MB Flash (for storing control parameters and firmware), supporting online firmware upgrades (without interrupting lithography machine operation).

• Housing and Protection: Compact metal housing (aluminum alloy, weight ≤500g) with dimensions 120mm×80mm×30mm (suitable for the narrow installation space inside the lithography machine). It has an IP20 protection rating (dust-proof and finger-touch proof). The operating temperature ranges from 18℃ to 25℃ (constant temperature environment of the lithography machine cleanroom), storage temperature ranges from -40℃ to 85℃, and relative humidity ranges from 30% to 50% (non-condensing), making it suitable for Class 1 cleanroom environments.

• Safety and Redundancy Design: Supports dual-module hot standby redundancy (main-standby switchover time ≤10μs). If a single module fails, the standby module takes over immediately without control interruption. It complies with SEMI F47 (voltage fluctuation tolerance) and SEMI S2 (semiconductor equipment safety) standards. Critical circuits (e.g., DSP, power supply) adopt a dual-redundancy design to avoid lithography machine downtime caused by single-point failures.

II. Technical Parameters

1. I/O Channel and Signal Parameters

2. Control Performance Parameters

3. Environmental and Reliability Parameters

III. Functional Features

1. Nanoscale Control Precision for Advanced Process Nodes

• 24-bit High-Resolution Output: The AO channel features 24-bit resolution and a ±10V signal range, with a minimum output step size of 0.477μV, corresponding to a wafer stage displacement precision of ±0.1nm (when paired with a laser interferometer with 1nm resolution). In lithography for the 28nm process node, it reduces overlay error from 2.0nm to 1.5nm, increasing chip yield by 3%.

• High-Frequency Response and Dynamic Compensation: The 1kHz output update frequency and 600 MIPS DSP computing capability enable real-time calculation of inertia errors in wafer stage motion (e.g., displacement overshoot during acceleration). Feedforward control compensation reduces dynamic positioning error from ±1.0nm to ±0.5nm, preventing edge blurring of lithographic patterns caused by motion overshoot.

• High-Precision Feedback Closed Loop: The AI channel with a 1MHz sampling rate collects position feedback from the laser interferometer in real time. The DSP updates control commands every microsecond, forming a high-frequency closed-loop control of "command-feedback-compensation". Even when the wafer stage moves at high speed (maximum speed 1m/s), it maintains a positioning precision of ±0.3nm.

2. Strong Electromagnetic Interference Resistance for Complex Lithography Machine Environments

• Multi-Layer Electromagnetic Shielding: The module housing adopts a double-layer copper foil shield + aluminum alloy grounded shell, providing a shielding effectiveness of ≥60dB (10MHz~1GHz). Near RF power supplies (electromagnetic radiation 50V/m), the AO output signal fluctuation is ≤0.001% FS, with no false command output.

• Optoelectronic Isolation and Signal Filtering: The analog channels feature 3kVrms optoelectronic isolation + adjustable low-pass filtering (10kHz~100kHz), eliminating ground loop interference and high-frequency noise. When the laser generator is activated, the signal-to-noise ratio of the position feedback collected by AI is ≥90dB, with no false deviations caused by noise.

• Low-Noise Power Supply Design: The ±15V analog power supply uses a linear voltage regulator (LDO) + multi-stage filter capacitors, with power supply ripple ≤1mVrms. This prevents power supply noise from affecting analog signal precision, ensuring AO output error ≤0.01% FS.

3. High Reliability and Redundancy Design for Uninterrupted Mass Production

• Dual-Module Hot Standby Redundancy: The main and standby modules operate synchronously. The lithography machine’s main controller compares output commands in real time; if a single module fails, switchover to the standby module occurs within 10μs without control interruption. In practical applications in a wafer fab, wafer stage positioning remained accurate during main module failure switchover, with no wafer scrapping.

• Long-Life Components: Industrial-grade high-stability components are used (e.g., low-drift resistors ≤5ppm/℃, ceramic capacitors with 10,000-hour lifespan). In a constant temperature environment of 18℃~25℃, the MTBF is ≥50,000 hours, with average annual downtime ≤1.75 hours—far below the ≤5 hours/year downtime requirement for semiconductor equipment.

• Online Maintenance and Upgrades: It supports online modification of control parameters (e.g., PID parameters, filter frequency) and firmware upgrades via ECS software, without module disassembly or downtime. A wafer fab completed firmware upgrades for MC1AB37 modules in 10 lithography machines during off-peak nighttime hours, taking only 30 minutes and causing no impact on daytime mass production.

4. Exclusive Compatibility with ASML Lithography Machines for System Synergy

• Protocol and Interface Adaptation: It supports ASML’s proprietary high-speed communication protocol (e.g., ASML HSSL, transmission rate 1Gbps). The communication delay with the main controller and servo drive is ≤10μs, ensuring multi-subsystem synchronization (e.g., motion synchronization error between wafer stage and reticle stage ≤0.2μs).

• Customized Control Logic: It incorporates control logic exclusive to ASML lithography processes (e.g., wafer stage motion trajectory optimization algorithm for the 28nm process, lens aberration compensation algorithm for the 14nm process). No secondary development by the user is required—it can be used with the corresponding lithography machine model right out of the box.

• Integrated Status Monitoring: Via ECS software, users can view the module’s output commands, feedback data, and fault logs (e.g., "AO Channel 1 Overvoltage", "AI Channel 3 Signal Loss") in real time. Maintenance personnel can remotely locate faults, reducing troubleshooting time from the traditional 4 hours to 30 minutes.