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Home > Electrical & Electronics > Battery, Storage Battery & Charger > Lithium Battery > PIC Laser Photodiodes Indium Phosphide Wafers - Centered Cubic Crystal Structure

PIC Laser Photodiodes Indium Phosphide Wafers - Centered Cubic Crystal Structure

Name: PIC Laser Photodiodes Indium Phosphide Wafers - Centered Cubic Crystal Structure
Brand: DXT/OEM
SKU: 154499386
Availability: InStock

PIC Laser Photodiodes Indium Phosphide Wafers - Centered Cubic Crystal Structure thumbnail-1

PIC Laser Photodiodes Indium Phosphide Wafers - Centered Cubic Crystal Structure photo-1

Negotiable MOQ: 1 Piece (Price negotiable depending on order volume and customization)

Key Specifications

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Brand Name:

DXT/OEM

Place of Origin:

China

Model Number:

two-, three- and four-inch

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Shenzhen Foms Fiber Company Limited

Payment & Shipping

Payment Methods:

Port of Shipment:

China

Delivery Detail:

7 days

Product Details
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Brand Name DXT/OEM

Place of Origin China

Model Number two-, three- and four-inch

Delivery Time:in 30 days
Certification:CAS / ISO9001/ SGS

InP III - Ⅴ Laser Photodiodes Face - Centered Cubic Crystal Structure Used On PIC

Indium Phosphide (InP) is a key semiconductor material that enables optical systems to deliver the performance required for data center, mobile backhaul, metro and long-haul applications. Lasers, photodiodes and waveguides fabricated on InP operate at the optimum transmission window of glass fiber, which enable efficient fiber communications.

Key Advantages:

InP wafers are available with diameters up to 4 inches, leading to a large number of devices obtained from each wafer.

25Gbps+ data rates are possible with directly modulated lasers based on InP wafers.

A large variety of semiconductor crystals can be deposited on an InP wafer, allowing fabrication of highly reliable devices over wide temperatures. InP’s low refractive index enables its use as the cladding for laser waveguides. InP is a direct bandgap material that enables the fabrication of single or integrated devices that absorb or emit at 1310 and 1550 nm, the two optimum wavelengths in the optical spectrum for fiber communications. InP is the preferred material to build laser sources for emerging silicon photonics products.

InP Single Chip Parameters(VGF Crystal Growth Process Technology)

Item	Diameter (inch)	Type	Carrier Concentration (cm-3)	Electron Mobility (cm2/V.s)	Resistivity (Ω.m)	Dislocation Density (cm-2)
InP	2	N	≤1×1018	(3.5-4)×103		＜1×103
S-InP	2	N	(0.5-1)×1018	(2-4)×103		＜500
	3		(0.5-1)×1018	(2-4)×103		＜1×103
	4		(0.5-1)×1018	(2-4)×103		＜2×103
Zn-InP	2/3/4	P	(0.5-1)×1018	50-70		＜1×103
Fe-InP	2	SI		＞2000	＞0.5×107	＜2.5×103
	3
	4
Single-side and double-side polishing, epiready. Crystal orientation(100). Standard thickness for two-inch chip is 350±25μm,three-inch chip is 600±25μm and four-inch chip is 625±25μm,others depend on different processing requirements.