Certification:CE
High Power Diode Laser Underarm Hair Removal Machine
Quick Detail:
1)Laser Type: Diode laser
2)Appliance:Beauty Salon, SPA, Hospital, Home etc
3)Feature: Hair Removal
Diode Laser Hair Removal Laser System:
Semiconductor laser hair removal machine is freezing through technological innovation, so that the treatment of head to negative temperature, unlike other laser burns the skin, to better protect the skin, hair follicle melanin by specific wavelength of laser absorption, and the heat exchange to destroy hair follicle, the laser energy can be shot down into the hair follicles within the hair follicle is destroyed energy decomposition, so that the hair follicles to stop growing, because the laser energy about 15% of the skin can penetrate the dermis layer, the epidermis and more with melanoma of the hair follicle deep through the heat damage to hair follicle degeneration and atrophy; achieve permanent hair removal results.
Applications:
Laser treatment head: permanent hair removal (beard, armpit hair, four limbs hair, etc.)
RF treatment of head: improve the skin aging, soothe wrinkles, improve sagging skin, so as to restore the youth;
Specifications:
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Items |
Data |
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Electronic properties |
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Current flow: |
230V AC |
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Frequency: |
50HZ |
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Maximum power: |
600W |
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Taxonomy |
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Anti-electric shock type |
I type |
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Degree of protection against electric shock |
BF type |
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Waterproof type |
General Instrument |
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Working environment |
|
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The range of the environment temperature |
+15℃ to +30℃ |
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The range of the relative humidity |
30% to 80% |
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The range of Atmospheric pressure |
86.0 kpa to 106.0kpa |
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The environment of the transport and storage |
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The range of the environment temperature |
+5℃ to +55℃ |
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The range of the relative humidity |
30% to 80% |
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The range of Atmospheric pressure |
86.0 kpa to 106.0kpa |
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Product Specifications |
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High |
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Long |
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Wide |
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Weight |
About 70Kg |
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The parameters of laser treatment handpiece(within RF) |
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Light source |
Semiconductor lasers and RF source |
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Spectral range |
808nm |
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Output energy density |
1~100J/c㎡ (808nm); |
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RF output power density |
1-50mJ/cm2 (RF) |
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RF energy |
1Mhz(Bipolar) |
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Pulse |
Single pulse |
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Number of pulses |
1~10 |
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Pulse width |
1-400ms |
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Deliver system |
Direct sapphire Coupling |
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Spot |
10 |
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