650nm FP High Power Laser Diode

650nm FP High Power Laser Diode photo-1
US$ 22.5 - 120 MOQ: 100 Pieces
Key Specifications
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Place of Origin:
Chongqing, China
Brand Name:
O-Send
Model Number:
OLD6XXXXXX
Payment & Shipping
Payment Methods:
Port of Shipment:
FOB Chongqing
Delivery Detail:
Delivery time depends on order quantity.
Place of Origin Chongqing, China
Brand Name O-Send
Model Number OLD6XXXXXX
Type Laser Diode
Package Type Other, coaxil

Specifications

MQW 635nm FP LD
Low threshold current
High output power
Built-in InGaAsP monitor PD

Absolute maximum ratings 

Parameter

Symbol

Value

Unit

LD Forward current

IF(LD)

100

mA

LD Reverse voltage

VR(LD)

2

V

PD Forward current

IF(PD)

2

mA

PD Reverse voltag

VR(PD)

30

V

Operating temperature

TOP

-10 ~ +65

°C

Storage temperature

TST

-40 ~ +85

°C

Soldering temperature/time

-

240/10

°C/S

Optical & electrical characteristics

Parameter

Symbol

Test condition

Min.

Typ.

Max.

Unit

Output power

Pout

CW,24mA

0.2

1.0

2.0

mW

CW,70mA

-

10.0

12.0

mW

Center wavelength

λc

CW

640

650

660

nm

630

635

640

nm

Spectral width

Δλ

CW,Ith+15mA

-

-

5

nm

Threshold current

Ith

650nm,25°C

15

20

45

mA

Operating voltage

Vop

CW, Ith+15mA

-

2.15

2.5

V

Monitor current

Im

CW, Ith+15mA

0.05

-

0.5

mA

 

 

 650nm FP high power laser diode

 

650nm FP high power laser diode

 

 

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Business Type
Manufacturer, Trading Company
Year Established
2004
Factory Size
3,000-5,000 square meters
Total Employees
101 - 200 People

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