650nm FP High Power Laser Diode
Specifications
MQW 635nm FP LDLow threshold current
High output power
Built-in InGaAsP monitor PD
Absolute maximum ratings
Parameter |
Symbol |
Value |
Unit |
LD Forward current |
IF(LD) |
100 |
mA |
LD Reverse voltage |
VR(LD) |
2 |
V |
PD Forward current |
IF(PD) |
2 |
mA |
PD Reverse voltag |
VR(PD) |
30 |
V |
Operating temperature |
TOP |
-10 ~ +65 |
°C |
Storage temperature |
TST |
-40 ~ +85 |
°C |
Soldering temperature/time |
- |
240/10 |
°C/S |
Optical & electrical characteristics
Parameter |
Symbol |
Test condition |
Min. |
Typ. |
Max. |
Unit |
Output power |
Pout |
CW,24mA |
0.2 |
1.0 |
2.0 |
mW |
CW,70mA |
- |
10.0 |
12.0 |
mW |
||
Center wavelength |
λc |
CW |
640 |
650 |
660 |
nm |
630 |
635 |
640 |
nm |
|||
Spectral width |
Δλ |
CW,Ith+15mA |
- |
- |
5 |
nm |
Threshold current |
Ith |
650nm,25°C |
15 |
20 |
45 |
mA |
Operating voltage |
Vop |
CW, Ith+15mA |
- |
2.15 |
2.5 |
V |
Monitor current |
Im |
CW, Ith+15mA |
0.05 |
- |
0.5 |
mA |
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