12N60 Mosfet TO-220 12A 600V Field-Effect Transistor
The TH012N60PM is silicon N-Channel Enhanced VDMOSFETS,is obtained by the self-aligned Planar Technology witch reduce the conduction loss, improve switching performance and enhance the avalanche energy.
General Features
VDS=600V,ID=12A
Low ON Resistance
Low Reverse transfer capacitances
100% Single Pulse avalanche energy Test
Thunder Microeletronics was establised in 1995, specialized in power semiconductor parts production for over 20 years. Factory Area is over 7000m², incluse 1000m² purification workshop (10T grade) . Our main products are Schottky Diodes, Fast and Ultra Fast Recovery Diode, Mosfet (Field-Effort diode), Transistors, Rectfider Bridges and Power Management IC. We have own product deveopment and applicatioon team, fully support your requirements.
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