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MJE2955T PNP Transistors -100V -10A TO-220W

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US$ 0.01 - 1 MOQ: 100 Pieces
Key Specifications
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Place of Origin:
Jiangsu, China
Brand Name:
HC
Model Number:
MJE2955T
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Wuxi Thunder Microelectronics Co., Ltd.
Payment & Shipping
Payment Methods:
Port of Shipment:
Shanghai shenzhen or follow customer demand
Delivery Detail:
Delivery time depends on order quantity.

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Place of Origin Jiangsu, China
Brand Name HC
Model Number MJE2955T
Type Bipolar Junction Transistor
Package Type Throught Hole
Product Description


 Features:
-Power Amplifier Applications
-Complementary to MJ21196G
-High collector voltage: VCEO=-250V (min)
- High SOA:3A , 80V , 1Sec
- 250 WATTS


Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.


Absolute Maximum Ratings(Tc=25℃):


Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
-400
V
Collector-emitter voltage
VCEO
-250
V
Emitter-base voltage
VEBO
-7
V
Collector current
IC
-17
A
Base current
IB
-5
A
Collector power dissipation;Tc=25℃
PC
250
W
Junction temperature
Tj
150
℃
Storage temperature range
TSTG
-55~150
℃

Electrical Characteristics Tc=(25℃ ）:


Characteristics
Symbol
 Test Condition
Min
Typ
Max
Unit
Collector cut-off current
ICBO
VCB=230V; IE=0
500
uA
Emitter cut-off current
IEBO
VEB=7V; Ic=0
500
uA
Dc current gain
hFE
IC=5A; VCE=4V;
70
140
Collector-emitter saturation voltage
VCE(sat)
IC=4A; IB=0.4A
0.5
V
Transition frequency
fT
VCE=10V; ICE=500mA ;f=1MHZ
58
MHZ
Symbol
Parameter
Typ
Units
RθJC
Junction-to-Case
0.83
℃/W


Related Products
* Below are part of general products provided by Thunder
* Package type could be adjusted according to customer needs
* New product (not in below list) could be developed according to customer needs
2SA1943
VCEO=-230V (min)
PNP TRANSISTORS
Complementary to 2SC5200
2SA5200
VCEO=230V (min)  
NPN TRANSISTORS
Complementary to 2SA1943
MJ21195G  
VCEO=-250V (min)
PNP TRANSISTORS
Complementary to MJ21196G
MJ21196G
VCEO=250V (min)
NPN TRANSISTORS
Complementary to MJ21195G
 TIP42C 
VCEO=-100V (min)
PNP TRANSISTORS
Complementary to TIP41C
 TIP41C 
VCEO=100V (min)
NPN TRANSISTORS
Complementary to TIP42C
2SA1837  
VCEO=-230V (min)
PNP TRANSISTORS
Complementary to 2SC4793
2SC4793
VCEO=230V (min)
NPN TRANSISTORS
Complementary to 2SA1837
2SA1941
VCEO=-200V (min)
PNP TRANSISTORS
Complementary to 2SC5198
2SC5198
VCEO=200V (min)
NPN TRANSISTORS
Complementary to 2SA1941
Our Company

Thunder Microeletronics was establised in 1995, specialized in power semiconductor parts production for over 20 years. Factory Area is over 7000m², incluse 1000m²  purification workshop (10T grade)  . Our main products are Schottky Diodes, Fast and Ultra Fast Recovery Diode, Mosfet (Field-Effort diode), Transistors, Rectfider Bridges and Power Management IC. We have own product deveopment and applicatioon team, fully support your requirements. 

Thunder Values :

* Future and Result Focus 

*Reliability, Credibility, Legality 

*Initiative and Sustainability
*Determination and Responsibility
*Trust, Openness and Fairness 
Certifications
Packing & Delivery

Delivery

* For general Diodes in stock,shippment in 3 days after payment received.
* We expect customer to place order 15 days in advance, in case the ordering quantity is large or product is not our regular stock.


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Wuxi Thunder Microelectronics Co., Ltd.
Business Type
Manufacturer, Trading Company
Year Established
1995
Factory Size
5,000-10,000 square meters
Total Employees
101 - 200 People
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