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Specifications
AlGaInP RGB SMD Red LED Chip*Wavelength: 620-625 nm
*Intensity: 40-120 mcd
*Vf<2.2 V
*IR<2.0 uA
- AlGaInP RGB SMD Red LED Chip
AlGaInP Red/Orange/Yellow/Green LED Wafer Chip Spec
- Description:AlGaInP MOCVD EPI Wafer s apply to MOCVD process
2.1 EPI Wafer Size:
Growth |
MOCVD |
Diameter |
2” |
Thickness |
270/350 + 20um |
2.2 EPI Wafer Structure:
High-Dopant level |
P-GaP |
Window level |
P-AlGaInP |
|
MQW |
Emitting Area |
N-AlGaInP |
DBR |
GaAs/AlAs |
Substrate |
N-GaAs 350um |
2.3 EPI Wafer Parameter:
parameter |
Condition |
Min. |
Typ. |
Max. |
Unit |
Forward Voltage(Vf1) |
If=10μA |
1.35 |
-- |
-- |
V |
Forward Voltage(Vf2) |
If=20mA |
-- |
-- |
2.2 |
V |
Revise Current(Ir) |
Vr=10V |
-- |
-- |
2 |
μA |
Wavelength(λd) |
If=20mA |
620 |
-- |
645 |
nm |
FWHM(Δλ) |
If=20mA |
-- |
10 |
-- |
nm |
2.4 Wavelength/mcd:
Item |
Unit |
Red |
Orange |
Yellow |
Yellow/Green |
Wave Length (λD) |
nm |
615~ 622/OR |
595 ~ 602/YO |
580 ~ 587/LY |
565 ~ 575/YG |
Wave Length (λD) |
nm |
620~ 627/LR |
600 ~ 607/LO |
585 ~ 592/SY |
|
Wave Length (λD) |
nm |
625~ 632/SR |
605 ~ 612/SO |
590 ~ 597/DY |
|
Wave Length (λD) |
nm |
630~ 637/DR |
610 ~ 617/DO |
|
|
Wave Length (λD) |
nm |
635~ 645/UR |
|
|
|
CL-CA*R109 Wavelength 620-627nm / 625-632 nm
Level |
LG |
LH |
LI |
LJ |
LK |
LL |
LM |
LN |
LO |
Iv avg(mcd) |
40 |
50 |
60 |
70 |
80 |
90 |
100 |
110 |
120 |
CL-CA*R109 Wavelength 630-637 nm /635-645 nm
Level |
LB |
LC |
LD |
LE |
LF |
LG |
LH |
Iv avg(mcd) |
15 |
20 |
25 |
30 |
35 |
40 |
50 |
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