Toshiba Fuji IGBT Power Module

Toshiba Fuji IGBT Power Module photo-1
US$ 10 - 100 MOQ: 50 Pieces
Key Specifications
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Place of Origin:
Zhejiang, China
Brand Name:
HUAJING
Model Number:
IGBT
Payment & Shipping
Payment Methods:
Port of Shipment:
shanghai or ningbo
Delivery Detail:
Delivery time depends on order quantity.
Place of Origin Zhejiang, China
Brand Name HUAJING
Model Number IGBT

Specifications

IGBT single-switch module
VCES = 600V,1200V IC = 200A~800A VISO = 2500V (RMS)

Feature
GBT is a MOSFET and bipolar transistor made of a composite
device, the input is extremely MOSFET, the output is extremely PNP
transistor, which integration of these two devices are the advantage of.
with a small power MOSFET device driver and switching speed
advantage.
with a bipolar device saturation pressure lowering of the advantage
of large capacity, it frequency response range and power MOSFET
transistor, and is available to work on dozen of kHz frequency range

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Business Type
Manufacturer, Trading Company
Year Established
1992
Factory Size
1,000-3,000 square meters
Total Employees
101 - 200 People

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